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Silicon

IMA-Approved Mineral Species

Chemical Element


Properties and Data
Physical Properties
Composition
Element 14

Si - Silicon
Atomic Weight
28.085 u
Density
2.329 g/cm3
Mohs Hardness
7
Melting Point
1414 °C (2577 °F)
Crystal System
Isometric
Optical Properties
Opaque in Visible Spectrum

Additional Properties
Inherent
Semiconductive
Additional Information
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Variants and Types
(Undoped / Generic)
(Undoped)
Color: Dark Gray
Production and Synthesis
Czochralski Method
Czochralski Method
Involves pulling a crystal (boule) upward from a molten solution. Produces some of the purest crystals but requires a cleanroom environment.
Kyropoulos Method
Kyropoulos Method
Derivative of the Czochralski method. Crystal grows into the feed material instead of being pulled. Can change the output purity and may be preferred.
Bridgman Technique
Bridgman Technique
Related to the Czochralski method. Material is melted in a crucible and the crucible itself is moved slowly into a colder zone, allowing for crystallization.
Horizontal Direction Solidification Method
HDSM
Related to the Bridgman technique. Material is melted and a crucible is moved horizontally instead of vertically, as with other methods.
Zone Melting
Zone Melting
Involves passing cold / hot zones over a melt / seed to concentrate impurities in specific regions, while forming a monocrystalline ingot at the end of the path.





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